Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

N Hossain; SJ Sweeney; S Rogowsky; R Ostendorf; J Wagner; S Liebich; M Zimprich; K Volz; B Kunert; W Stolz

doi:10.1049/el.2011.1927

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

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Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

N Hossain, SJ Sweeney, S Rogowsky, R Ostendorf, J Wagner, S Liebich, M Zimprich, K Volz, B Kunert and W Stolz

ELECTRONICS LETTERS, Vol.47(16), pp.931-933

04/08/2011

DOI: https://doi.org/10.1049/el.2011.1927

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Title: Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE
Creators: N Hossain
SJ Sweeney
S Rogowsky
R Ostendorf
J Wagner
S Liebich
M Zimprich
K Volz
B Kunert
W Stolz
Publication Details: ELECTRONICS LETTERS, Vol.47(16), pp.931-933
Publisher: INST ENGINEERING TECHNOLOGY-IET
Date published: 04/08/2011
Date submitted: 17/11/2011
Identifiers: 99515449702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

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