Abstract
Since 2009, metal halide perovskites have attracted a great deal of attention in different optoelectronic applications, such as solar cells, photodetectors (PDs), light-emitting diodes, lasers etc, owing to their excellent electrical and optoelectrical properties. However, since the discovery of graphene, atomically thin 2D materials have been the central focus of materials research due to its exciting properties. Thus, integrating 2D materials with perovskite material can be highly promising for various optoelectronic applications, in particular for ultrasensitive photodetection. In these PDs, 2D materials serve various roles, such as charge transport layer, Schottky contacts, photo absorbers, etc, while perovskite is the light-harvesting active layer. In this review, we focus on the recent findings and progress on metal halide perovskite/2D material phototransistors and hybrid PDs. We comprehensively summarize recent efforts and developments of perovskite/graphene, perovskite/transition-metal dichalcogenides, perovskite/black phosphorus, and perovskite/MXene based phototransistor and heterojunction PDs from the perspective of materials science and device physics. The perovskite/2D material phototransistor can exhibit very high photoresponsivity and gain due to the amplification function of transistors and the pronounced photogating effect in 2D material, while perovskite/2D material heterojunction PD can operate without external bias due to built-in potential across the heterojunction. This review also provides state-of-the-art progress on flexible, transparent, self-powered and PD systems and arrays based on perovskite/2D materials. After summarizing the ongoing research and challenges, the future outlook is presented for developing metal halide perovskite/2D material hybrid PDs for practical applications.