Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures

SR Jin; SJ Sweeney; CN Ahmad; AR Adams; BN Murdin

doi:10.1063/1.1772871

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Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures

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Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures

SR Jin, SJ Sweeney, CN Ahmad, AR Adams and BN Murdin

APPLIED PHYSICS LETTERS, Vol.85(3), pp.357-359

19/07/2004

DOI: https://doi.org/10.1063/1.1772871

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SEMICONDUCTOR-LASERS

THRESHOLD CURRENT

DEPENDENCE

INP

PERFORMANCE

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Title: Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures
Creators: SR Jin
SJ Sweeney
CN Ahmad
AR Adams
BN Murdin
Publication Details: APPLIED PHYSICS LETTERS, Vol.85(3), pp.357-359
Publisher: AMER INST PHYSICS
Date published: 19/07/2004
Date submitted: 23/10/2012
Identifiers: 99513009902346
Academic Unit: School of Computer Science and Electronic Engineering; School of Maths and Physics
Language: English
Resource Type: Journal article

Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures

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