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Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si
Journal article   Peer reviewed

Post-annealing effect on the microstructure and photoluminescence properties of the ion beam synthesized FeSi2 precipitates in Si

Y Gao, YT Chong, CF Chow, SP Wong, KP Homewood and Q Li
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.259(2), pp.871-874
01/06/2007
DOI: https://doi.org/10.1016/j.nimb.2007.02.102

Abstract

Science & Technology Technology Physical Sciences Instruments & Instrumentation Nuclear Science & Technology Physics Atomic Molecular & Chemical Physics Nuclear Physics INSTRUMENTS & INSTRUMENTATION NUCLEAR SCIENCE & TECHNOLOGY PHYSICS ATOMIC MOLECULAR & CHEMICAL PHYSICS NUCLEAR FeSi2 ion implantation TEM photoluminescence BETA-FESI2 FILMS MU-M TEMPERATURE DEPOSITION SILICON ORIGIN
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