Photoluminescence investigation of high quality GaAs1-xBix on GaAs

AR Mohmad; F Bastiman; JS Ng; SJ Sweeney; JPR David

doi:10.1063/1.3565244

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Photoluminescence investigation of high quality GaAs1-xBix on GaAs

Journal article

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Photoluminescence investigation of high quality GaAs1-xBix on GaAs

AR Mohmad, F Bastiman, JS Ng, SJ Sweeney and JPR David

APPLIED PHYSICS LETTERS, Vol.98(12), pp.?-?

21/03/2011

DOI: https://doi.org/10.1063/1.3565244

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

MOLECULAR-BEAM EPITAXY

SEMICONDUCTORS

TEMPERATURE

DEPENDENCE

GROWTH

GAP

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Title: Photoluminescence investigation of high quality GaAs1-xBix on GaAs
Creators: AR Mohmad
F Bastiman
JS Ng
SJ Sweeney
JPR David
Publication Details: APPLIED PHYSICS LETTERS, Vol.98(12), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 21/03/2011
Date submitted: 17/11/2011
Identifiers: 99515228202346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Photoluminescence investigation of high quality GaAs1-xBix on GaAs

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