Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

CF Chow; Y Gao; SP Wong; N Ke; Q Li; WY Cheung; G Shao; MA Lourenco; KP Homewood

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Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Journal article

Peer reviewed

Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

CF Chow, Y Gao, SP Wong, N Ke, Q Li, WY Cheung, G Shao, MA Lourenco and KP Homewood

Amorphous and Nanocrystalline Silicon Science and Technology-2005, Vol.862, pp.507-512

01/01/2005

Abstract

Science & Technology

Physical Sciences

Technology

Crystallography

Instruments & Instrumentation

Materials Science

Multidisciplinary

Materials Science

Characterization & Testing

Materials Science

BEAM-SYNTHESIZED BETA-FESI2

LIGHT-EMITTING DIODE

MU-M LUMINESCENCE

TEMPERATURE

SI

SILICON

ORIGIN

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Title: Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation
Creators: CF Chow
Y Gao
SP Wong
N Ke
Q Li
WY Cheung
G Shao
MA Lourenco
KP Homewood
Contributors: RW Collins
PC Taylor
M Kondo
R Carius
R Biswas
Publication Details: Amorphous and Nanocrystalline Silicon Science and Technology-2005, Vol.862, pp.507-512
Publisher: MATERIALS RESEARCH SOCIETY
Date published: 01/01/2005
Date submitted: 17/05/2017
Identifiers: 99516225802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Photoluminescence and electroluminescence properties of FeSi2-Si structures formed by MEVVA implantation

Abstract

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