On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers

N Hossain; SR Jin; SJ Sweeney; S Liebich; P Ludewig; M Zimprich; B Kunert; K Volz; W Stolz

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On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers

N Hossain, SR Jin, SJ Sweeney, S Liebich, P Ludewig, M Zimprich, B Kunert, K Volz and W Stolz

Optics InfoBase Conference Papers

01/12/2010

Abstract

Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monolithically on a silicon substrate. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current. © 2010 OSA /FiO/LS 2010.

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Title: On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers
Creators: N Hossain
SR Jin
SJ Sweeney
S Liebich
P Ludewig
M Zimprich
B Kunert
K Volz
W Stolz
Publication Details: Optics InfoBase Conference Papers
Date published: 01/12/2010
Date submitted: 17/05/2017
Identifiers: 99514906202346
Academic Unit: University of Surrey
Resource Type: Journal article

On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers

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