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Novel electronic and optoelectronic properties of GaInNAs and related alloys
Journal article   Open access  Peer reviewed

Novel electronic and optoelectronic properties of GaInNAs and related alloys

EP O'Reilly, S Fahy, A Lindsay, S Tomić, R Fehse, AR Adams, SJ Sweeney, AD Andreev, PJ Klar, H Grüning, …
OSA Trends in Optics and Photonics Series, Vol.88, pp.523-525
2003

Abstract

We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 μm vertical emitting lasers. ©2000 Optical Society of America.
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