Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

SR Jin; R Fehse; SJ Sweeney; G Knowles; AR Adams; EP O'Reilly; H Reichert; S Illek; AY Egorov; PJA Thijs; T Uchida; T Fujii

doi:10.1049/el:20020217

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$Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure$

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Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

SR Jin, R Fehse, SJ Sweeney, G Knowles, AR Adams, EP O'Reilly, H Reichert, S Illek, AY Egorov, PJA Thijs, …

ELECTRONICS LETTERS, Vol.38(7), pp.325-327

28/03/2002

DOI: https://doi.org/10.1049/el:20020217

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Science & Technology

Technology

Engineering

Electrical & Electronic

Engineering

ENGINEERING

ELECTRICAL & ELECTRONIC

TEMPERATURE-DEPENDENCE

DIODE-LASERS

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Title: Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure
Creators: SR Jin
R Fehse
SJ Sweeney
G Knowles
AR Adams
EP O'Reilly
H Reichert
S Illek
AY Egorov
PJA Thijs
T Uchida
T Fujii
Publication Details: ELECTRONICS LETTERS, Vol.38(7), pp.325-327
Publisher: IEE-INST ELEC ENG
Date published: 28/03/2002
Date submitted: 17/05/2017
Identifiers: 99514354202346
Academic Unit: University of Surrey; School of Maths and Physics
Language: English
Resource Type: Journal article

Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure

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