Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation

Y Gao; GS Shao; Q Li; YM Xu; SP Wong; MY Zhou; MA Lourenco; KP Homewood

doi:10.1143/JJAP.46.5777

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Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation

Journal article

Peer reviewed

Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation

Y Gao, GS Shao, Q Li, YM Xu, SP Wong, MY Zhou, MA Lourenco and KP Homewood

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol.46(9A), pp.5777-5779

01/09/2007

DOI: https://doi.org/10.1143/JJAP.46.5777

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

high-manganese silicides

ion implantation

optical absorption

transmission electron microscopy

electronic structure

HIGHER MANGANESE SILICIDE

THIN-FILMS

BETA-FESI2

ABSORPTION

SI(001)

PHASE

FESI2

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Title: Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation
Creators: Y Gao
GS Shao
Q Li
YM Xu
SP Wong
MY Zhou
MA Lourenco
KP Homewood
Publication Details: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol.46(9A), pp.5777-5779
Publisher: INST PURE APPLIED PHYSICS
Date published: 01/09/2007
Date submitted: 17/05/2017
Identifiers: 99511478502346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation

Abstract

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