Localization effects and band gap of GaAsBi alloys

AR Mohmad; F Bastiman; CJ Hunter; RD Richards; SJ Sweeney; JS Ng; JPR David; BY Majlis

doi:10.1002/pssb.201350311

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Localization effects and band gap of GaAsBi alloys

Journal article

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Localization effects and band gap of GaAsBi alloys

AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, JPR David and BY Majlis

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.251(6), pp.1276-1281

01/06/2014

DOI: https://doi.org/10.1002/pssb.201350311

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

band gap

GaAsBi

localization theory

photoluminescence

MOLECULAR-BEAM EPITAXY

SEMICONDUCTORS

GAAS1-XBIX

EMISSION

ORIGIN

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Title: Localization effects and band gap of GaAsBi alloys
Creators: AR Mohmad
F Bastiman
CJ Hunter
RD Richards
SJ Sweeney
JS Ng
JPR David
BY Majlis
Publication Details: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.251(6), pp.1276-1281
Publisher: WILEY-V C H VERLAG GMBH
Date published: 01/06/2014
Date submitted: 17/05/2017
Identifiers: 99514941002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Localization effects and band gap of GaAsBi alloys

Abstract

Files and links (1)

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