InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

S Jin; SJ Sweeney

doi:10.1063/1.4837615

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InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

Journal article

Peer reviewed

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

S Jin and SJ Sweeney

JOURNAL OF APPLIED PHYSICS, Vol.114(21), ARTN 21310

07/12/2013

DOI: https://doi.org/10.1063/1.4837615

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

MOLECULAR-BEAM-EPITAXY

QUANTUM-WELL LASERS

BAND OFFSETS

MU-M

SEMICONDUCTORS

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Title: InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices
Creators: S Jin
SJ Sweeney
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.114(21), ARTN 21310
Publisher: AMER INST PHYSICS
Date published: 07/12/2013
Date submitted: 17/05/2017
Identifiers: 99511355402346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

Abstract

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