Electrically injected GaAsBi quantum well lasers

SJ Sweeney; IP Marko; SR Jin; K Hild; Z Batool; P Ludewig; L Natterman; Z Bushell; W Stolz; K Volz; CA Broderick; M Usman; PE Harnedy; EP Oreilly; R Butkute; V Pacebutas; A Geiutis; A Krotkus

doi:10.1109/ISLC.2014.173

Back

Electrically injected GaAsBi quantum well lasers

Journal article

Peer reviewed

Electrically injected GaAsBi quantum well lasers

SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, L Natterman, Z Bushell, W Stolz, K Volz, …

Conference Digest - IEEE International Semiconductor Laser Conference, pp.80-81

01/01/2014

DOI: https://doi.org/10.1109/ISLC.2014.173

Abstract

Physics

GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.

Metrics

30 Record Views

Details

Title: Electrically injected GaAsBi quantum well lasers
Creators: SJ Sweeney
IP Marko
SR Jin
K Hild
Z Batool
P Ludewig
L Natterman
Z Bushell
W Stolz
K Volz
CA Broderick
M Usman
PE Harnedy
EP Oreilly
R Butkute
V Pacebutas
A Geiutis
A Krotkus
Publication Details: Conference Digest - IEEE International Semiconductor Laser Conference, pp.80-81
Publisher: IEEE
Date published: 01/01/2014
Date submitted: 27/06/2016
Identifiers: 99515444002346
Copyright: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Academic Unit: University of Surrey
Resource Type: Journal article

Electrically injected GaAsBi quantum well lasers

Abstract

Metrics

Details

Usage Policy