Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Journal article

Open access

Peer reviewed

KJ Cheetham, A Krier, IP Marko, A Aldukhayel and SJ Sweeney

APPL PHYS LETT, Vol.99(14), 141110

03/10/2011

Abstract

antimony compounds

arsenic compounds

Auger effect

band structure

electroluminescence

electron-hole recombination

gallium compounds

indium compounds

infrared spectra

light emitting diodes

spin-orbit interactions

PRESSURE-DEPENDENCE

MU-M

LASERS

ALLOYS

SEMICONDUCTORS

TEMPERATURE

LEDS

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url

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Title: Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
Creators: KJ Cheetham
A Krier
IP Marko
A Aldukhayel
SJ Sweeney
Publication Details: APPL PHYS LETT, Vol.99(14), 141110
Publisher: AMER INST PHYSICS
Date published: 03/10/2011
Date submitted: 17/11/2011
Identifiers: 99515589102346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article