Abstract
An accurate description of the distribution of hydrogen at solar cell interfaces is critical for understanding both passivation and degradation phenomena. Time-of-flight elastic recoil detection analysis (ToF-ERDA) has recently been employed to study this hydrogen distribution by providing a one-dimensional (1D) depth profile. In this work, ToF-ERDA was used to investigate the hydrogen profile in a SiOX / SiNX passivating stack. The ability to resolve the interface with the c-Si interface was studied by using polished wafers and thin (20 nm) passiv-ating stacks. This approach, coupled with Monte Carlo ERD (MCERD) modelling, showed that the identification of the interfacial oxide was much more clearly defined compared with previous reports using ToF-ERDA. Annealing the SiOX / SiNX at 450 °C for 5 minutes substantially increased the effective lifetime. However, no noticeable change in the H distribution measured with ToF-ERD was observed. We comment on the difficulty of correlating physical hydrogen measurements with the surface recombination properties.