Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

K Hild; SJ Sweeney; S Wright; DA Lock; SR Jin; IP Marko; SR Johnson; SA Chaparro; S-Q Yu; Y-H Zhang

doi:10.1063/1.2369649

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Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

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Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

K Hild, SJ Sweeney, S Wright, DA Lock, SR Jin, IP Marko, SR Johnson, SA Chaparro, S-Q Yu and Y-H Zhang

APPLIED PHYSICS LETTERS, Vol.89(17), pp.?-?

23/10/2006

DOI: https://doi.org/10.1063/1.2369649

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

SEMICONDUCTOR DIODE-LASERS

PRESSURE-DEPENDENCE

DOT LASERS

BAND OFFSETS

BOUND-STATES

OPERATION

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Title: Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers
Creators: K Hild
SJ Sweeney
S Wright
DA Lock
SR Jin
IP Marko
SR Johnson
SA Chaparro
S-Q Yu
Y-H Zhang
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(17), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 23/10/2006
Date submitted: 04/01/2012
Identifiers: 99512037202346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

Abstract

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