Bismide-alloys for higher efficiency infrared semiconductor lasers

SJ Sweeney

doi:10.1109/ISLC.2010.5642728

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Journal article

Bismide-alloys for higher efficiency infrared semiconductor lasers

SJ Sweeney

22nd IEEE International Semiconductor Laser Conference, pp.111-112

ISLC 2010 (Kyoto, Japan, 26/09/2010 - 30/09/2010)

2010

DOI: https://doi.org/10.1109/ISLC.2010.5642728

Abstract

The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.

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Title: Bismide-alloys for higher efficiency infrared semiconductor lasers
Creators: SJ Sweeney
Contributors: IEEE (null)
Publication Details: 22nd IEEE International Semiconductor Laser Conference, pp.111-112
Event: ISLC 2010 (Kyoto, Japan, 26/09/2010 - 30/09/2010)
Date published: 2010
Date submitted: 30/04/2012
Identifiers: 99514924702346
Academic Unit: University of Surrey
Resource Type: Journal article

Bismide-alloys for higher efficiency infrared semiconductor lasers

Abstract

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