Band structure properties of novel BxGa1-xP alloys for silicon integration

N Hossain; TJC Hosea; SJ Sweeney; S Liebich; M Zimprich; K Volz; B Kunert; W Stolz

doi:10.1063/1.3630018

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Band structure properties of novel BxGa1-xP alloys for silicon integration

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Band structure properties of novel BxGa1-xP alloys for silicon integration

N Hossain, TJC Hosea, SJ Sweeney, S Liebich, M Zimprich, K Volz, B Kunert and W Stolz

JOURNAL OF APPLIED PHYSICS, Vol.110(6), pp.?-?

15/09/2011

DOI: https://doi.org/10.1063/1.3630018

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

GAP

SUBSTRATE

SI

SEMICONDUCTORS

EPITAXY

GROWTH

MOVPE

GAAS

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Title: Band structure properties of novel BxGa1-xP alloys for silicon integration
Creators: N Hossain
TJC Hosea
SJ Sweeney
S Liebich
M Zimprich
K Volz
B Kunert
W Stolz
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.110(6), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 15/09/2011
Date submitted: 17/11/2011
Identifiers: 99515504802346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Band structure properties of novel BxGa1-xP alloys for silicon integration

Abstract

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