A deep semiconductor defect with continuously variable activation energy and capture cross section

MA Lourenco; WL Ng; KP Homewood; K Durose

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A deep semiconductor defect with continuously variable activation energy and capture cross section

Journal article

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A deep semiconductor defect with continuously variable activation energy and capture cross section

MA Lourenco, WL Ng, KP Homewood and K Durose

APPLIED PHYSICS LETTERS, Vol.75(2), pp.277-279

12/07/1999

Abstract

Science & Technology

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Physics

Applied research

Physics

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APPLIED

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Title: A deep semiconductor defect with continuously variable activation energy and capture cross section
Creators: MA Lourenco
WL Ng
KP Homewood
K Durose
Publication Details: APPLIED PHYSICS LETTERS, Vol.75(2), pp.277-279
Publisher: AMER INST PHYSICS
Publication Date: 12/07/1999
Identifiers: 99514788802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

A deep semiconductor defect with continuously variable activation energy and capture cross section

Abstract

Files and links (1)

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