Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications

Igor P Marko; Alfred R Adams; Stephen J Sweeney

doi:10.23919/ISLC52947.2022.9943464

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Conference proceeding

Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications

Igor P Marko, Alfred R Adams and Stephen J Sweeney

The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings

01/01/2022

DOI: https://doi.org/10.23919/ISLC52947.2022.9943464

Abstract

Gallium indium arsenide phosphide

Indium phosphides

Quantum well lasers

Semiconductor lasers

Conference Title: 2022 28th International Semiconductor Laser Conference (ISLC) Conference Start Date: 2022, Oct. 16 Conference End Date: 2022, Oct. 19 Conference Location: Matsue, JapanWe describe the use of a modified QW structure to achieve temperature stability in O-band lasers. We show the potential for temperature insensitivity of threshold from -40 to $+80{\ }^{\circ}\mathrm{C}$ in an InGaAsP/InP structure. Such devices are of interest for lower energy consuming datacomms systems.

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Title: Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications
Creators: Igor P Marko - University of Surrey
Alfred R Adams - University of Surrey
Stephen J Sweeney - University of Surrey
Publication Details: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings
Publisher: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Date published: 01/01/2022
Identifiers: 99822617702346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Temperature-insensitive InP-based Quantum Well Lasers Operating in the O-band for Datacom Applications

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