Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

Dominic A Duffy; Igor P Marko; Christian Fuchs; Thilo Hepp; Jannik Lehr; Kerstin Volz; Wolfgang Stolz; Stephen J Sweeney

doi:10.23919/ISLC52947.2022.9943462

Conference proceeding

Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

Dominic A Duffy, Igor P Marko, Christian Fuchs, Thilo Hepp, Jannik Lehr, Kerstin Volz, Wolfgang Stolz and Stephen J Sweeney

The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings

01/01/2022

DOI: https://doi.org/10.23919/ISLC52947.2022.9943462

Abstract

Semiconductor lasers

Temperature dependence

Conference Title: 2022 28th International Semiconductor Laser Conference (ISLC) Conference Start Date: 2022, Oct. 16 Conference End Date: 2022, Oct. 19 Conference Location: Matsue, JapanWe investigate the temperature-dependence of modal gain for type-II (GaIn)As/Ga(AsSb) “W”-laser structures operating around the O-band. Measurements show their potential to control the temperature dependence of the gain due to carrier-induced band bending effects. This is of interest to semiconductor laser and optical amplifier applications.

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Title: Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures
Creators: Dominic A Duffy - University of Surrey
Igor P Marko - Philipps University of Marburg
Christian Fuchs - Philipps University of Marburg
Thilo Hepp - Philipps University of Marburg
Jannik Lehr - Philipps University of Marburg
Kerstin Volz - Philipps University of Marburg
Wolfgang Stolz - Philipps University of Marburg
Stephen J Sweeney - Philipps University of Marburg
Publication Details: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings
Publisher: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Date published: 01/01/2022
Identifiers: 99822526002346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Reduced Temperature-Dependence of Optical Gain in Type-II GaAs-based “W”-Laser Structures

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