Abstract
The results on the temperature dependence of the radiative and non-radiative recombination processes in p-doped and undoped quantum dot (QD) lasers suggest that the observed characteristics of p-doped QDs are caused by an increase in the effective conduction band off-set due to Columbic attraction of the extra holes and so an increased localization of electrons in the dots. This leads to an increase in the temperature at which the carriers are able to establish thermal equilibrium from T=200K in the undoped devices to >= 320K in the p-doped samples. Interestingly this can be used to advantage since, as the temperature increases, the improved efficiency associated with better transport between the dots can be exactly offset by the increasing rate of Auger recombination, thus leading to a temperature stable operation around room temperature.