The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers

AF Phillips; SJ Sweeney; AR Adams; PJA Thijs

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The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers

Conference presentation

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The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers

AF Phillips, SJ Sweeney, AR Adams and PJA Thijs

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.211(1), pp.513-518

8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII) (THESSALONIKI, GREECE, 09/08/1998 - 13/08/1998)

01/01/1999

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

TEMPERATURE-DEPENDENCE

SENSITIVITY

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Title: The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers
Creators: AF Phillips
SJ Sweeney
AR Adams
PJA Thijs
Contributors: WILEY-V C H VERLAG GMBH (Publisher)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.211(1), pp.513-518
Conference: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII) (THESSALONIKI, GREECE, 09/08/1998 - 13/08/1998)
Date published: 01/01/1999
Date submitted: 17/05/2017
Identifiers: 99516385902346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers

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