Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers

DG McConville; SJ Sweeney; AR Adams; S Tomic; H Riechert

doi:10.1002/pssb.200672575

Back

Conference presentation

Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers

DG McConville, SJ Sweeney, AR Adams, S Tomic and H Riechert

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.208-212

12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)

01/01/2007

DOI: https://doi.org/10.1002/pssb.200672575

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

INGAASN/GAAS LASERS

SEMICONDUCTORS

Files and links (1)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000243693600037&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

50 Record Views

Details

Title: Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers
Creators: DG McConville
SJ Sweeney
AR Adams
S Tomic
H Riechert
Contributors: WILEY-V C H VERLAG GMBH (null)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.208-212
Conference: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)
Date published: 01/01/2007
Date submitted: 23/10/2012
Identifiers: 99511359502346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers

Abstract

Files and links (1)

Metrics

Details

Usage Policy