Abstract
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.
- Title
- Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers
- Creators
- N HossainK HildS JinSJ SweeneyS-Q YuSR JohnsonD DingY-H Zhang
- Contributors
- IEEE (null)
- Publication Details
- 23rd Annual Meeting of the IEEE Photonics Society, pp.59-60
- Conference
- Photonics 2010 (Denver, USA, 07/11/2010 - 11/11/2010)
- Date published
- 2010
- Date submitted
- 23/10/2012
- Identifiers
- 99514876402346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation