Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

N Hossain; SR Jin; SJ Sweeney; S Liebich; P Ludewig; M Zimprich; K Volz; B Kunert; W Stolz

doi:10.1109/GROUP4.2011.6053745

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Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

N Hossain, SR Jin, SJ Sweeney, S Liebich, P Ludewig, M Zimprich, K Volz, B Kunert and W Stolz

8th IEEE International Conference on Group IV Photonics, pp.148-150

Group IV Photonics (London, UK, 14/09/2011 - 16/09/2011)

2011

DOI: https://doi.org/10.1109/GROUP4.2011.6053745

Abstract

This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm-2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.

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Title: Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon
Creators: N Hossain
SR Jin
SJ Sweeney
S Liebich
P Ludewig
M Zimprich
K Volz
B Kunert
W Stolz
Contributors: IEEE (null)
Publication Details: 8th IEEE International Conference on Group IV Photonics, pp.148-150
Conference: Group IV Photonics (London, UK, 14/09/2011 - 16/09/2011)
Date published: 2011
Date submitted: 23/10/2012
Identifiers: 99514467102346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

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