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Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures
Conference presentation

Materials and light-emitting diode properties of dilute-nitride GaNP/GaP heterostructures

CW Tu, VA Odnoblyudov, J Chamings, S Ahmed, SJ Sweeney and DM Keogh
Device Research Conference - Conference Digest, pp.299-300
66th DRC (Santa Barbara, USA, 23/06/2008 - 25/06/2008)
2008

Abstract

In this paper GaNP/GaP LED structures are much simpler to grow than conventional process, chip processing uses existing technology, and GaNP/GaP LEDs exhibit only a small wavelength shift with injection current. With increasing temperature, the electroluminescence (EL) intensity decreases. Thus, GaNP/GaP LEDs are in the process of being commercialized.

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