- Title
- Influence of growth temperature on carrier recombination in GaInNAs-based lasers
- Creators
- R FehseSJ SweeneyAR AdamsD McConvilleH RiechertL Geelhaar
- Contributors
- INST ENGINEERING TECHNOLOGY-IET (Publisher)
- Publication Details
- IEE PROCEEDINGS-OPTOELECTRONICS, Vol.151(5), pp.447-451
- Conference
- Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS (Strasbourg, FRANCE, 24/05/2004 - 28/05/2004)
- Date published
- 01/10/2004
- Date submitted
- 17/05/2017
- Identifiers
- 99515479202346
- Academic Unit
- University of Surrey; School of Maths and Physics
- Resource Type
- Conference presentation
Conference presentation
Influence of growth temperature on carrier recombination in GaInNAs-based lasers
IEE PROCEEDINGS-OPTOELECTRONICS, Vol.151(5), pp.447-451
Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS (Strasbourg, FRANCE, 24/05/2004 - 28/05/2004)
01/10/2004
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