Abstract
Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al0.8Ga0.2As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al0.8Ga0.2As.