Electrically injected GaAsBi Quantum Well Lasers

SJ Sweeney; IP Marko; SR Jin; K Hild; Z Batool; P Ludewig; L Natterman; Z Bushell; W Stolz; K Volz; CA Broderick; M Usman; PE Harnedy; EP O'Reilly; R Butkute; V Pacebutas; A Geizutis; A Krotkus

doi:10.1109/ISLC.2014.96

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Electrically injected GaAsBi Quantum Well Lasers

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Electrically injected GaAsBi Quantum Well Lasers

SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, L Natterman, Z Bushell, W Stolz, K Volz, …

2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), pp.80-81

24th IEEE International Semiconductor Laser Conference (ISLC) (Palma de Mallorca, SPAIN, 07/09/2014 - 10/09/2014)

01/01/2014

DOI: https://doi.org/10.1109/ISLC.2014.96

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GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.

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Title: Electrically injected GaAsBi Quantum Well Lasers
Creators: SJ Sweeney
IP Marko
SR Jin
K Hild
Z Batool
P Ludewig
L Natterman
Z Bushell
W Stolz
K Volz
CA Broderick
M Usman
PE Harnedy
EP O'Reilly
R Butkute
V Pacebutas
A Geizutis
A Krotkus
Contributors: IEEE COMPUTER SOC
Publication Details: 2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), pp.80-81
Conference: 24th IEEE International Semiconductor Laser Conference (ISLC) (Palma de Mallorca, SPAIN, 07/09/2014 - 10/09/2014)
Date published: 01/01/2014
Date submitted: 27/06/2016
Identifiers: 99515289002346
Copyright: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Academic Unit: School of Maths and Physics
Resource Type: Conference presentation

Electrically injected GaAsBi Quantum Well Lasers

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