Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure

AR Adams; R Fehse; S Tomic; EP O'Reilly; A Andreev; G Knowles; TE Sale; SJ Sweeney; G Steinle; A Ramakrishnan; H Riechert

doi:10.1117/12.481002

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Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure

AR Adams, R Fehse, S Tomic, EP O'Reilly, A Andreev, G Knowles, TE Sale, SJ Sweeney, G Steinle, A Ramakrishnan, …

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, Vol.4905, pp.183-197

Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002) (SHANGHAI, PEOPLES R CHINA, 15/10/2002 - 18/10/2002)

01/01/2002

DOI: https://doi.org/10.1117/12.481002

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Optics

Physics

Applied

Telecommunications

Engineering

Physics

QUANTUM-WELL LASERS

MU-M

SEMICONDUCTOR-LASERS

THRESHOLD CURRENT

ROOM-TEMPERATURE

GANXAS1-X

GAIN

DEPENDENCE

NITROGEN

DIODES

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Title: Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure
Creators: AR Adams
R Fehse
S Tomic
EP O'Reilly
A Andreev
G Knowles
TE Sale
SJ Sweeney
G Steinle
A Ramakrishnan
H Riechert
Contributors: CJ ChangHasnain
YX Xia
K Iga
SPIE-INT SOC OPTICAL ENGINEERING (Publisher)
Publication Details: APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, Vol.4905, pp.183-197
Conference: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002) (SHANGHAI, PEOPLES R CHINA, 15/10/2002 - 18/10/2002)
Date published: 01/01/2002
Date submitted: 17/05/2017
Identifiers: 99514386102346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure

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