Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

IP Marko; AR Adams; SJ Sweeney; NF Masse; R Krebs; JP Reithmaier; A Forchel; DJ Mowbray; MS Skolnick; HY Liu; KM Groom; N Hatori; M Sugawara

doi:10.1002/pssb.200672544

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Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

IP Marko, AR Adams, SJ Sweeney, NF Masse, R Krebs, JP Reithmaier, A Forchel, DJ Mowbray, MS Skolnick, HY Liu, …

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.82-86

12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)

01/01/2007

DOI: https://doi.org/10.1002/pssb.200672544

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Physical Sciences

Physics

Condensed Matter

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Title: Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure
Creators: IP Marko
AR Adams
SJ Sweeney
NF Masse
R Krebs
JP Reithmaier
A Forchel
DJ Mowbray
MS Skolnick
HY Liu
KM Groom
N Hatori
M Sugawara
Contributors: WILEY-V C H VERLAG GMBH (null)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.82-86
Conference: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)
Date published: 01/01/2007
Date submitted: 19/10/2012
Identifiers: 99513380502346
Academic Unit: University of Surrey; School of Maths and Physics
Resource Type: Conference presentation

Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

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