Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon

N Hossain; J Hosea; S Liebich; M Zimprich; K Volz; B Kunert; W Stolz; S Sweeney

doi:10.1063/1.4848278

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Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon

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Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon

N Hossain, J Hosea, S Liebich, M Zimprich, K Volz, B Kunert, W Stolz and S Sweeney

PHYSICS OF SEMICONDUCTORS, Vol.1566, pp.47-48

31st International Conference on the Physics of Semiconductors (ICPS) (Zurich, SWITZERLAND, 29/07/2012 - 03/08/2012)

01/01/2013

DOI: https://doi.org/10.1063/1.4848278

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Engineering

Physics

BGaP

GaNAsP

Silicon laser

Carrier recombination

Silicon photonics

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Title: Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon
Creators: N Hossain
J Hosea
S Liebich
M Zimprich
K Volz
B Kunert
W Stolz
S Sweeney
Contributors: T Ihn
C Rossler
A Kozikov
AMER INST PHYSICS (Publisher)
Publication Details: PHYSICS OF SEMICONDUCTORS, Vol.1566, pp.47-48
Conference: 31st International Conference on the Physics of Semiconductors (ICPS) (Zurich, SWITZERLAND, 29/07/2012 - 03/08/2012)
Date published: 01/01/2013
Date submitted: 17/05/2017
Identifiers: 99514634702346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Band Structure Properties of (BGa)P Semiconductors for Lattice Matched Integration on (001) Silicon

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