Abstract
Ion Implantation
In article number 2000237 by Nathan Cassidy, Roger Webb, David Cox, and co‐workers, preliminary results are presented from the first commercially produced implanter specifically designed for rapid and precise positioning of single ions into device structures for solid state quantum technology applications. Specifically the implantation of single bismuth ions into Si, Ge, Cu, and Au are reported, and the counting detection efficiency for single ion implants and the factors that affect such detection efficiencies are determined.