Abstract
This paper addresses issues in the theory of field-induced electron emission. First, it summarises our present understanding of the theory of Fowler-Nordheim (FN) plots, and shows the relationship between a recent precise (in standard FN theory) approach to the interpretation of the FN-plot intercept and older approximate approaches. Second, it comments on the interpretation of FN plots taken from semiconductor field emitters. Third, it summarises the main points of a recent hypothesis about the mechanism of field-induced emission from carbonbased films and other electrically nanostructured heterogeneous (ENH) materials. Weaknesses in previous hypotheses are noted. It is hypothesised that thin films of all ENH materials, when deposited on a conducting substrate, will emit electrons in appropriate circumstances. Such films emit electrons at low macroscopic fields because they contain conducting nanostructure inside them: this structure generates sufficient geometrical field enhancement near the film/vacuum interface that more-or-less normal Fowler-Nordheim emission can occur. In connection with experiments on amorphous carbon films carried out by a group in Fribourg, it is shown that nanostructure of the size measured by scanning probe techniques should be able to generate field enhancement of the size measured in field electron spectroscopy experiments. This result provides a quantitative corroboration of other work suggesting that emission from amorphous carbon films is primarily due to geometrical field enhancement by nanostructures inside the film. Some counter-arguments to the internal-field-enhancement hypothesis are considered and disposed of. Some advantages of ENH materials as broad-area field emission electron sources are noted; these include control of material design.