In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate

Dianne C. Corsino; Eva Bestelink; Federica Catania; Radu A. Sporea; Niko Munzenrieder; Giuseppe Cantarella

doi:10.1109/IFETC57334.2023.10254818

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In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate

Dianne C. Corsino, Eva Bestelink, Federica Catania, Radu A. Sporea, Niko Munzenrieder and Giuseppe Cantarella

2023 IEEE International Flexible Electronics Technology Conference (IFETC) Proceedings

Institute of Electrical and Electronics Engineers (IEEE)

2023 IEEE International Flexible Electronics Technology Conference (IFETC) (San Jose, USA, 13/08/2023 - 16/08/2023)

DOI: https://doi.org/10.1109/IFETC57334.2023.10254818

Abstract

InGaZnO

thin-film transistors

source-gated transistors

tunnel layer

flexible electronics

We report the first In-Ga-Zn-O source-gated transistors on a flexible polyimide film. Our findings show that using Au contacts and the incorporation of an ultrathin SiO 2 tunnel layer facilitate contact-controlled operation, distinct from conventional thin-film transistors with Ti contacts. This was confirmed by early saturation in the output characteristics and the very low saturation voltage change over a gate voltage change of < 0.1 V/V which agrees well with the theoretical saturation coefficient of ≈ 0.1.

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Title: In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate
Creators: Dianne C. Corsino (Corresponding Author) - Free University of Bozen-Bolzano
Eva Bestelink (Author) - University of Surrey, School of Computer Science and Electronic Engineering
Federica Catania (Author) - Free University of Bozen-Bolzano
Radu A. Sporea (Author) - University of Surrey, School of Computer Science and Electronic Engineering
Niko Munzenrieder (Author) - Free University of Bozen-Bolzano
Giuseppe Cantarella (Author) - Free University of Bozen-Bolzano
Publication Details: 2023 IEEE International Flexible Electronics Technology Conference (IFETC) Proceedings
Conference: 2023 IEEE International Flexible Electronics Technology Conference (IFETC) (San Jose, USA, 13/08/2023 - 16/08/2023)
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Grants: EP/V002759/1, Engineering and Physical Sciences Research Council (United Kingdom, Swindon) - EPSRC
Integrated flexible sensor conditioning circuits for high performance wearables, IES\R2\202056, Royal Society (United Kingdom, London)
Grant note: This collaborative project was supported in part by the Autonomous Province of Bozen-Bolzano-South Tyrol’s European Regional Development Fund (ERDF) Program under Project EFRE/FESR1140-PhyLab; in part by the International Joint Cooperation South Tyrol-Switzerland Swiss National Foundation (SNF) FLEXIBOTS Project under Grant 2/34; and in part by the EPSRC grant no. EP/V002759/1 and Royal Society of Great Britain project IES\R2\202056.
Identifiers: 99922864302346
Copyright: © Copyright 2023 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to use any copyrighted component of this work in other work must be obtained from the IEEE.
Academic Unit: School of Computer Science and Electronic Engineering
Resource Type: Conference presentation

In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate

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