Type-II GaAs1-xBix/GaNyAs(1-y) "W" quantum wells for strain-compensated GaAs-based telecom lasers

Zoe C. M. Davidson; Thilo Hepp; Judy M. Rorison; Stephen J. Sweeney; Kerstin Volz; Christopher A. Broderick

doi:10.1109/ISLC51662.2021.9615882

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Conference proceeding

Type-II GaAs1-xBix/GaNyAs(1-y) "W" quantum wells for strain-compensated GaAs-based telecom lasers

Zoe C. M. Davidson, Thilo Hepp, Judy M. Rorison, Stephen J. Sweeney, Kerstin Volz and Christopher A. Broderick

27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)

01/01/2021

DOI: https://doi.org/10.1109/ISLC51662.2021.9615882

Abstract

Engineering, Electrical & Electronic

Physics, Applied

Science & Technology

Engineering

Optics

Physical Sciences

Physics

Technology

We discuss a new class of type-II quantum wells (QWs) that exploit the impact of Bi and N on the GaAs band-structure. Via growth, experiment, and theoretical calculations we highlight the properties of GaAs1-xBix/GaNyAs1-y "W" QWs, demonstrating a potential pathway to uncooled telecom-wavelength laser operation.

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Title: Type-II GaAs1-xBix/GaNyAs(1-y) "W" quantum wells for strain-compensated GaAs-based telecom lasers
Creators: Zoe C. M. Davidson - University of Bristol
Thilo Hepp - Philipps University of Marburg
Judy M. Rorison - University of Bristol
Stephen J. Sweeney - University of Surrey
Kerstin Volz - Philipps University of Marburg
Christopher A. Broderick - University College Cork
Publication Details: 27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)
Publisher: IEEE
Number of pages: 2
Date published: 01/01/2021
Grant note: University of Bristol GRK 1782; SFB 1083 / German Science Foundation; German Research Foundation (DFG) National University of Ireland 15/IA/3082 / Science Foundation Ireland EP/N021037/1 / Engineering and Physical Sciences Research Council, U.K.; UK Research & Innovation (UKRI); Engineering & Physical Sciences Research Council (EPSRC)
Identifiers: 99822525402346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Type-II GaAs1-xBix/GaNyAs(1-y) "W" quantum wells for strain-compensated GaAs-based telecom lasers

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