Highly efficient THz transient four-wave mixing in doped semiconductors

N. Dessmann; Nguyen H. Le; Eless; K. Saeedi; S. G. Pavlov; K. L. Litvinenko; H. Riemann; N. Abrosimov; G. Aeppli; B. Redlich; B. Murdin; IEEE

doi:10.1109/IRMMW-THz50927.2022.9895783

Conference proceeding

Highly efficient THz transient four-wave mixing in doped semiconductors

N. Dessmann, Nguyen H. Le, Eless, K. Saeedi, S. G. Pavlov, K. L. Litvinenko, H. Riemann, N. Abrosimov, G. Aeppli, B. Redlich, …

2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022)

International Conference on Infrared Millimeter and Terahertz Waves

01/01/2022

DOI: https://doi.org/10.1109/IRMMW-THz50927.2022.9895783

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We present a quantitative study of the efficiency of degenerate THz transient four-wave mixing in germanium doped by shallow impurities using the Dutch free electron laser FELIX. We derive the third order nonlinear sheet susceptibility and find values at low temperature that exceed those of any other material and wavelength range reported to date.

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Title: Highly efficient THz transient four-wave mixing in doped semiconductors
Creators: N. Dessmann - Radboud University Nijmegen
Nguyen H. Le - University of Surrey
Eless - Radboud University Nijmegen
K. Saeedi - Radboud University Nijmegen
S. G. Pavlov - Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)
K. L. Litvinenko - University of Surrey
H. Riemann - Leibniz Institute for Crystal Growth
N. Abrosimov - Leibniz Institute for Crystal Growth
G. Aeppli - Paul Scherrer Institute
B. Redlich - Radboud University Nijmegen
B. Murdin - University of Surrey
IEEE
Publication Details: 2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022)
Series: International Conference on Infrared Millimeter and Terahertz Waves
Publisher: IEEE
Number of pages: 1
Publication Date: 01/01/2022
Identifiers: 99817635002346; WOS:000865953000269
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Highly efficient THz transient four-wave mixing in doped semiconductors

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