Abstract
Low‐dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally nanoscale and has already demonstrated attractive electronic properties, however its application to electronics is limited by available fabrication techniques and CMOS incompatibility. Here, the characteristics of transmission lines made from silicon doped with phosphorus are investigated using phosphine monolayer doping. S‐parameter measurements are performed between 4–26 GHz from room temperature down to 4.5 K. At 20 GHz, the measured monolayer transmission line characteristics consist of an attenuation constant of 40 dB mm−1 and a characteristic impedance of 600 Ω. The results indicate that Si:P monolayers are a viable candidate for microwave transmission and that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication.
Low‐dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide‐semiconductor (CMOS) to silicon quantum technologies. In this study, monolayer transmission lines made from silicon delta‐doped with phosphorus are characterized and it is shown that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication.