Abstract
There are many technical challenges in the fabrication of devices from novel materials. The characterization of these materials is critical in the development of efficient photovoltaic systems. We show how the application of recent advances in MeV IBA, providing the self-consistent treatment of RBS (Rutherford backscattering) and PIXE (particle induced X-ray emission) spectra, makes a new set of powerful complementary depth profiling techniques available for all thin film technologies, including the chalcopyrite compound semiconductors. We will give and discuss a detailed analysis of a CuInAl metallic precursor film, showing how similar methods are also applicable to other films of interest.