Abstract
Dilute bismide Ga(PAsBi)-based structures are promising candidates for highly efficient optoelectronic applications, like the 1 eV sub-cell in multi-junction solar cells or the active region in infra-red laser diodes. The band gap can be tuned independently from the lattice constant, which theoretically enables the deposition of lattice-matched layers in a wide range of band gap energies on GaAs substrate. In this work, firstly, the shifts in the band edge positions as a function of composition that are possible with the Ga(PAs(Bi)) alloy were estimated using the virtual crystal approximation and valence band anti-crossing theory. Secondly, systematic investigations on MOVPE growth of Ga(PAsBi) layers are presented. Finally, we show the first photoluminescence activity of quaternary Ga(PAsBi) and compare the experimental results to theory. (C) 2016 Elsevier Ltd. All rights reserved.