Abstract
Using a combination of temperature and pressure dependence measurements, we investigate the relative importance of recombination processes in InGaAs-based QW lasers. We find that radiative and Auger recombination are important in high quality InGaAs material. At 1.5 mu m, Auger recombination accounts for 80% I-th at room temperature reducing to similar to 50% at 1.3 mu m and similar to 15% at 980nm. We also find that Auger recombination dominates the temperature dependence of I-th around room temperature over the entire operating wavelength range studied (980nm-1.5 mu m).