Abstract
1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.
- Title
- Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations
- Creators
- N. Peng - University of SurreyW. Sullivan - University of BristolJohn W. Steeds - University of Bristol
- Publication Details
- Materials science forum, Vol.615-617, pp.409-412
- Publisher
- Trans Tech Publications Ltd
- Date published
- 01/01/2009
- Identifiers
- 99782978302346
- Academic Unit
- School of Computer Science and Electronic Engineering
- Language
- English
- Resource Type
- Journal article