Buried Interfaces in Halide Perovskite Photovoltaics

Xiaoyu Yang, Deying Luo, Yuren Xiang, Lichen Zhao, Miguel Anaya, Yonglong Shen, Jiang Wu, Wenqiang Yang, Yu‐Hsien Chiang, Yongguang Tu, …

Advanced Materials (Weinheim), Vol.33(7), 2006435

02/2021

DOI: https://doi.org/10.1002/adma.202006435

PMID: 33393159

Abstract

Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is of paramount importance to the enhancement of device efficiency and stability. Nevertheless, accessing buried interfaces poses a sizeable challenge because of their non‐exposed feature. Herein, the mystery of the buried interface in full device stacks is deciphered by combining advanced in situ spectroscopy techniques with a facile lift‐off strategy. By establishing the microstructure–property relations, the basic losses at the contact interfaces are systematically presented, and it is found that the buried interface losses induced by both the sub‐microscale extended imperfections and lead‐halide inhomogeneities are major roadblocks toward improvement of device performance. The losses can be considerably mitigated by the use of a passivation‐molecule‐assisted microstructural reconstruction, which unlocks the full potential for improving device performance. The findings open a new avenue to understanding performance losses and thus the design of new passivation strategies to remove imperfections at the top surfaces and buried interfaces of perovskite photovoltaics, resulting in substantial enhancement in device performance.

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Title: Buried Interfaces in Halide Perovskite Photovoltaics
Creators: Xiaoyu Yang - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China
Deying Luo - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China, School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China
Yuren Xiang - University of Surrey, School of Computer Science and Electronic Engineering
Lichen Zhao - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China
Miguel Anaya - Cavendish Laboratory University of Cambridge Cambridge CB3 0HE UK
Yonglong Shen - State Centre for International Cooperation on Designer Low‐Carbon and Environmental Material (SCICDLCEM) School of Materials Science and Engineering Zhengzhou University Zhengzhou 450001 China
Jiang Wu - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China
Wenqiang Yang - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Yu‐Hsien Chiang - Cavendish Laboratory University of Cambridge Cambridge CB3 0HE UK
Yongguang Tu - Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics (IFE) Northwestern Polytechnical University Xi'an 710072 China
Rui Su - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China
Qin Hu - Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Polymer Science and Engineering University of Massachusetts Amherst MA 01003 USA
Hongyu Yu - School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China
Guosheng Shao - State Centre for International Cooperation on Designer Low‐Carbon and Environmental Material (SCICDLCEM) School of Materials Science and Engineering Zhengzhou University Zhengzhou 450001 China
Wei Huang - Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics (IFE) Northwestern Polytechnical University Xi'an 710072 China
Thomas P Russell - Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Polymer Science and Engineering University of Massachusetts Amherst MA 01003 USA
Qihuang Gong - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China, Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China, Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu 226010 China
Samuel D Stranks - Cavendish Laboratory University of Cambridge Cambridge CB3 0HE UK, Department of Chemical Engineering and Biotechnology University of Cambridge Cambridge CB3 0AS UK
Wei Zhang - University of Surrey, School of Computer Science and Electronic Engineering
Rui Zhu - State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Frontiers Science Center for Nano‐optoelectronics, and Collaborative Innovation Center of Quantum Matter Peking University Beijing 100871 China, Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China, Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu 226010 China
Publication Details: Advanced Materials (Weinheim), Vol.33(7), 2006435
First online publication date: 04/01/2021
Publication Date: 02/2021
Identifiers: 99539723602346; WOS:000604273900001
Copyright: © 2021 Wiley‐VCH GmbH. This is the peer reviewed version of the following article: Yang, X., Luo, D., Xiang, Y., Zhao, L., Anaya, M., Shen, Y., Wu, J., Yang, W., Chiang, Y.‐H., Tu, Y., Su, R., Hu, Q., Yu, H., Shao, G., Huang, W., Russell, T. P., Gong, Q., Stranks, S. D., Zhang, W., Zhu, R., Buried Interfaces in Halide Perovskite Photovoltaics. Adv. Mater. 2021, 33, 2006435., which has been published in final form at https://doi.org/10.1002/adma.202006435. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions."
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article
SDG (Scopus 2023): SDG 7

Buried Interfaces in Halide Perovskite Photovoltaics

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