RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS

GM CREAN; PD COLE; C JEYNES

doi:10.1016/0038-1101(90)90178-H

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RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS

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RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS

GM CREAN, PD COLE and C JEYNES

SOLID-STATE ELECTRONICS, Vol.33(6), pp.655-658

01/06/1990

DOI: https://doi.org/10.1016/0038-1101(90)90178-H

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

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Title: RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS
Creators: GM CREAN
PD COLE
C JEYNES
Publication Details: SOLID-STATE ELECTRONICS, Vol.33(6), pp.655-658
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Publication Date: 01/06/1990
Identifiers: 99516887302346; WOS:A1990DP25500007
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

RANGE DISTRIBUTIONS OF ION-IMPLANTED BORON, PHOSPHORUS AND ARSENIC DOPANTS IN THERMALLY REACTED TITANIUM SILICIDE THIN-FILMS

Abstract

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