The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs

M Webb; C Jeynes; RM Gwilliam; Z Tabatabaian; A Royle; BJ Sealy

doi:10.1016/j.nimb.2005.04.100

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The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs

Journal article

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The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs

M Webb, C Jeynes, RM Gwilliam, Z Tabatabaian, A Royle and BJ Sealy

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.237(1-2), pp.193-196

01/08/2005

DOI: https://doi.org/10.1016/j.nimb.2005.04.100

Abstract

Science & Technology

Technology

Physical Sciences

Instruments & Instrumentation

Nuclear Science & Technology

Physics

Atomic

Molecular & Chemical

Physics

Nuclear

Physics

smart-cut

exfoliation

blistering

hydrogen implantation

TECHNOLOGY

SI

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Title: The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs
Creators: M Webb
C Jeynes
RM Gwilliam
Z Tabatabaian
A Royle
BJ Sealy
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.237(1-2), pp.193-196
Publisher: ELSEVIER SCIENCE BV
Date published: 01/08/2005
Date submitted: 12/08/2013
Identifiers: 99516725902346
Academic Unit: Department of Chemistry
Language: English
Resource Type: Journal article

The influence of the ion implantation temperature and the flux on smart-cut (c) in GaAs

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