HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

JL ALTRIP; AGR EVANS; J LOGAN; C JEYNES

doi:10.1016/0038-1101(90)90179-I

Back

HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

Journal article

Peer reviewed

HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

JL ALTRIP, AGR EVANS, J LOGAN and C JEYNES

SOLID-STATE ELECTRONICS, Vol.33(6), pp.659-664

01/06/1990

DOI: https://doi.org/10.1016/0038-1101(90)90179-I

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

Files and links (1)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990DP25500008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

Details

Title: HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON
Creators: JL ALTRIP
AGR EVANS
J LOGAN
C JEYNES
Publication Details: SOLID-STATE ELECTRONICS, Vol.33(6), pp.659-664
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Publication Date: 01/06/1990
Identifiers: 99516717002346; WOS:A1990DP25500008
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

Abstract

Files and links (1)

Metrics

Details

Usage Policy