Surrey researchers Sign in
Back
HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON
Journal article   Peer reviewed

HIGH-TEMPERATURE MILLISECOND ANNEALING OF ARSENIC IMPLANTED SILICON

JL ALTRIP, AGR EVANS, J LOGAN and C JEYNES
SOLID-STATE ELECTRONICS, Vol.33(6), pp.659-664
01/06/1990
DOI: https://doi.org/10.1016/0038-1101(90)90179-I

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Physics Applied Physics Condensed Matter Engineering Physics ENGINEERING ELECTRICAL & ELECTRONIC PHYSICS APPLIED PHYSICS CONDENSED MATTER
url
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990DP25500008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View
Author

Metrics

33 Record Views
2 Times Cited - Web of Science

Details

Usage Policy

Usage details for all content viewed and downloaded in this site are shared with IRUS-UK (Institutional Repository Usage Statistics UK). Cookies are used to remember your decision. Click Accept to accept usage details sharing and the cookies.

Learn more