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Near-threshold sputtering mechanisms from a computer simulation of argon- bombarded clean and oxygen-reacted copper single crystals
Journal article   Peer reviewed

Near-threshold sputtering mechanisms from a computer simulation of argon- bombarded clean and oxygen-reacted copper single crystals

RP Webb and DE Harrison
Journal of Applied Physics, Vol.53(7), pp.5243-5249
01/12/1982

Abstract

Normal incidence argon-copper sputtering mechanisms have been investigated for ion energies just above threshold. Identical mechanisms operate in both the (111) and (001) surface orientations. Adsorption of an ordered oxygen overlay on the surface does not destroy the ejection processes. Although the mechanisms produce similar ejected atom energy distributions, the processes may be experimentally distinguishable through the angular emission spectrum of the ejected copper atoms.

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