Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

EV Yakovlev; RA Talalaev; RW Martin; C Jeynes; N Peng; CJ Deatcher; IM Watson

doi:10.1002/pssc.200565182

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Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

EV Yakovlev, RA Talalaev, RW Martin, C Jeynes, N Peng, CJ Deatcher and IM Watson

Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, Vol.3(6), pp.1620-1623

6th International Conference on Nitride Semiconductors (ICNS-6) (Bremen, GERMANY, 28/08/2005 - 02/09/2005)

01/01/2006

DOI: https://doi.org/10.1002/pssc.200565182

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Title: Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor
Creators: EV Yakovlev
RA Talalaev
RW Martin
C Jeynes
N Peng
CJ Deatcher
IM Watson
Contributors: S Hildebrandt
M Stutzmann
WILEY-VCH, INC (Publisher)
Publication Details: Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, Vol.3(6), pp.1620-1623
Conference: 6th International Conference on Nitride Semiconductors (ICNS-6) (Bremen, GERMANY, 28/08/2005 - 02/09/2005)
Date published: 01/01/2006
Date submitted: 17/05/2017
Identifiers: 99516649802346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

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