Exploration of the inherent magnetoresistance in InSb thin films

T Zhang; JJ Harris; WR Branford; SK Clowes; LF Cohen; SA Solin

doi:10.1088/0268-1242/21/12/007

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Exploration of the inherent magnetoresistance in InSb thin films

Journal article

Peer reviewed

Exploration of the inherent magnetoresistance in InSb thin films

T Zhang, JJ Harris, WR Branford, SK Clowes, LF Cohen and SA Solin

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.21(12), pp.1543-1546

01/12/2006

DOI: https://doi.org/10.1088/0268-1242/21/12/007

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Condensed Matter

Engineering

Materials Science

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

CONDENSED MATTER

MOLECULAR-BEAM EPITAXY

ELECTRONIC-PROPERTIES

SEMICONDUCTORS

MOBILITY

EPILAYERS

DENSITY

FIELD

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Title: Exploration of the inherent magnetoresistance in InSb thin films
Creators: T Zhang
JJ Harris
WR Branford
SK Clowes
LF Cohen
SA Solin
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.21(12), pp.1543-1546
Publisher: IOP PUBLISHING LTD
Date published: 01/12/2006
Date submitted: 17/05/2017
Identifiers: 99516569602346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Exploration of the inherent magnetoresistance in InSb thin films

Abstract

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